Thin LiTaO3 films were prepared by spin coating of polymerized
sol-gel precursor solution. Films have been deposited on single crystal
silicon substrate, Ti/Pt or SiO2 coated silicon substrate. Films
were characterized by x-ray diffraction, dielectric and pyroelectric
Measurements. High Curie temperature (above 550 °C) was assumed for
LiTaO3 thin films from the temperature dependence of
dielectric constant. Replacing 35% of tantalum by titanium atoms in the
LiTaO3 precursor solution has resulted the thin films with
Curie temperature of 330 °C. The lower Curie temperature leads to the larger
pyroelectric coefficient at room-temperature, which is more than double that
of the undoped LiTaO3 thin films. The dielectric, pyroelectric,
and ferroelectric properties have been compared to the single crystal
LiTaO3 and ceramic
Li0.91Ta0.73Ti0.36O3.
LiTaO3 thin films are available by sol-gel process at low
temperature, and their properties may possibly be controlled by varying the
composition of the sol-gel precursor solution.